Method and apparatus for current sensing and measurement
AssigneeMaxim Integrated Products, Inc.
InventorGabriel E. Tanase
Life of this patent
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Abstract
A method and apparatus for current sensing and measurement employs two cascaded MOSFET current mirrors, wherein the mirrored current leaving the first current mirror is fed to the input of the second current mirror. Each current mirror contains a high current MOSFET and a low current MOSFET, connected source-to-source and gate-to-gate. The MOSFETs are matched so that drain-to-source current flowing in the high current MOSFET is proportional to the drain-to-source current flowing in the low current MOSFET. The ratio of high current to low current for each current mirror is M, where M is 100 or less. Voltage biasing networks are employed to maintain constant drain-to-source voltages for both MOSFETs in each current mirror.
Claims5
A current sensing and measurement apparatus comprising:
- a first current mirror having an input terminal, a high current output terminal, and a mirrored current output terminal;
- a second current mirror having an input terminal, a high current output terminal, and a mirrored current output terminal;
- a third current mirror having an input terminal, a high current output terminal, and a mirrored current output terminal, wherein the first current mirror, the second current mirror, and the third current mirror comprise n MOSFET current mirrors, each of which has a gain Mn, and wherein the mirrored current output terminal of the first current mirror is connected to the input terminal of the second current mirror, and the mirrored current output terminal of the second current mirror is connected to the input terminal of the third current mirror;
- and
- a series connection of n−1 MOSFETS coupled to the high current output terminals of adjacent current mirrors, whereby a current Iin to be measured is provided by the n−1th MOSFET.
Dependencies are inferred from the claim text.