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US 9,804,475 B1Granted
Radio-frequency loss reduction in photonic circuits
AssigneeAurrion, Inc.
InventorsJohn Parker, Gregory Alan Fish, Brian R. Koch
Life of this patent
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Abstract
In photonic integrated circuits implemented in silicon-on-insulator substrates, non-conductive channels formed, in accordance with various embodiments, in the silicon device layer and/or the silicon handle of the substrate in regions underneath radio-frequency transmission lines of photonic devices can provide breaks in parasitic conductive layers of the substrate, thereby reducing radio-frequency substrate losses.
Claims5
A photonic integrated circuit (PIC) comprising:
- a silicon-on-insulator substrate comprising a silicon handle, a buried oxide layer disposed on top of the silicon handle, a silicon device layer disposed on top of the buried oxide layer, and a cladding layer disposed on top of the silicon device layer;
- a first photonic device comprising a device structure made of a material embedded within the cladding layer and a transmission line having two or more electrodes disposed on top of the cladding layer, the two or more electrodes defining one or more gaps between the electrodes;
- one or more second photonic devices formed partially within at least one of the silicon device layer or the cladding layer;
- and
- formed within at least one of the silicon handle or the silicon device layer in a region underneath the transmission line, one or more nonconductive channels each laterally overlapping with one of the one or more gaps and not extending beyond outer edges of the electrodes defining the respective gap.
2 more elements
Dependencies are inferred from the claim text.