Array substrate and fabrication method thereof and display device
AssigneeBoe Technology Group Co., Ltd.
InventorsZhanfeng Cao, Xiaoyang Tong, Qi Yao
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Abstract
Embodiments of the invention provide an array substrate and a fabrication method thereof and a display device. The fabrication method of an array substrate includes: forming a semiconductor active layer, a gate insulating layer and a gate electrode on a substrate; forming a light-shielding layer; forming a first color filter layer, forming a second color filter layer and forming a third color filter layer; and forming via holes that respectively penetrate through the first color filter layer, the second color filter layer and the third color filter layers; and forming a pixel electrode and source and drain electrodes.
Claims9
A fabrication method of an array substrate, including:
- forming a semiconductor active layer, a gate insulating layer and a gate electrode on a substrate;
- forming a light-shielding layer;
- forming a first color filter layer and forming a second color filter layer;
- forming a third color filter layer and forming via holes that respectively penetrate through the first color filter layer, the second color filter layer and the third color filter layers;
- and
- forming a pixel electrode and source and drain electrodes,
- wherein, forming via holes includes:
- coating a photoresist on the third color filter layer, and forming a third photoresist-completely-reserved region and a third photoresist-completely-removed region through exposure and development with a mask, wherein the third photoresist-completely-removed region corresponds to regions on both sides of the gate electrode and above the semiconductor active layer where the via holes are to be formed, and the third photoresist-completely-reserved region corresponds to a region above the third color filter layer other than the region where the via holes are to be formed;
- removing the third color filter layer, the first color filter layer and the second color filter layer in the third photoresist-completely-removed region through an etching process;
- and
- stripping off the photoresist.
A fabrication method of an array substrate, including:
- forming a semiconductor active layer, a gate insulating layer and a gate electrode on a substrate;
- forming a light-shielding layer;
- forming a first color filter layer and forming a second color filter layer;
- forming a third color filter layer and forming via holes that respectively penetrate through the first color filter layer, the second color filter layer and the third color filter layers;
- and
- forming a pixel electrode and source and drain electrodes,
- wherein, forming a pixel electrode and source and drain electrodes includes;
- depositing a pixel electrode layer;
- depositing a source and drain metal layer;
- coating a photoresist, and forming a fourth photoresist-completely-reserved region, a fourth photoresist-partially-reserved region and a fourth photoresist-completely-removed region through exposure and development with a dual-tone mask, wherein the fourth photoresist-completely-reserved region corresponds to the via holes, the photoresist-partially-reserved region corresponds to a region of a portion of each of the first to third color filter layers that is not formed above the semiconductor active layer, the fourth photoresist-completely-removed region corresponds to a region of another portion of each of the first to third color filter layers that is not formed above the semiconductor active layer and a region in which the gate electrode, the gate insulating layer and the color filter layer are formed;
- removing the pixel electrode layer and the source and drain metal layer in the fourth photoresist-completely-removed region through an etching process;
- performing an ashing process to remove the photoresist in the fourth photoresist-partially-reserved region;
- removing the source and drain metal layer in the region of the portion of each of the first to third color filter layers that is not formed above the semiconductor active layer through an etching process;
- and
- stripping off the photoresist.
Dependencies are inferred from the claim text.