Combined n-type and p-type MOS-based radiation sensors for environmental compensations
AssigneePurdue Research Foundation
InventorSean M. Scott
Life of this patent
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Abstract
An apparatus is disclosed comprising a metal oxide semiconductor capacitor (MOSCAP) comprising one or more gate layers disposed over a contiguous radiation-sensitive insulating layer, wherein the contiguous radiation-sensitive insulating layer comprises one or more contacting dielectric layers. A method may be employed to measure a value of a radiation-induced capacitance response of a metal oxide semiconductor capacitor (MOSCAP) from multiple non-contacting gate layers disposed over a radiation-sensitive layer comprising of one or more contacting dielectric layers to thereby enhance a sensitivity and a resolution of a radiation response of the MOSCAP.
Claims7
A method comprising:
- measuring a first value of a capacitance response parameter of a first sensor comprising an n-type metal oxide semiconductor capacitor (MOSCAP), and
- measuring a second value of the response parameter of a second sensor comprising a p-type MOSCAP, wherein the first sensor and the second sensor have a same response to a first stimuli, comprising an incident radiation dose, and a different response to a second stimuli, comprising a environmental parameter, thereby isolating an effect of the first stimuli and the second stimuli on the response parameter when both the first stimuli and the second stimuli are present
- the first sensor comprises an n-type metal oxide semiconductor capacitor (MOSCAP) and the second sensor comprise a p-type MOSCAP.
Dependencies are inferred from the claim text.