Magnetoresistance element with an improved seed layer to promote an improved response to magnetic fields

A method of fabricating a magnetoresistance element, comprising:

• depositing a seed layer structure over a semiconductor substrate, wherein the depositing the seed layer structure comprises:
• depositing a ferromagnetic seed layer consisting of a binary alloy of NiFe;
• and
• depositing a first nonmagnetic spacer layer disposed under and directly adjacent to the ferromagnetic seed layer and proximate to the substrate, wherein the first nonmagnetic spacer layer is comprised of Ta or Ru, wherein the method further comprises:
• depositing a free layer structure over the seed layer structure, wherein the depositing the ferromagnetic seed layer comprises depositing the ferromagnetic seed layer in the presence of a motion along a predetermined direction and in the presence of a predetermined magnetic field having the same predetermined direction, resulting in the ferromagnetic seed layer having a greater crystalline anisotropy such that the free layer structure is promoted by the seed layer structure to have magnetic domains with magnetic fields oriented in a first direction and to reduce the number of domains with magnetic fields pointing in one or more second different directions.

A magnetoresistance element, comprising:

• a substrate;
• a seed layer structure disposed over the substrate, the seed layer structure comprising a ferromagnetic seed layer;
• a first nonmagnetic spacer layer disposed under and proximate to the ferromagnetic seed layer;
• a second nonmagnetic spacer layer disposed over and proximate to the ferromagnetic seed layer, wherein the first and second nonmagnetic spacer layers are comprised of Ta or Ru;
• and
• a free layer structure disposed over the seed layer structure, wherein the ferromagnetic seed layer comprises a crystalline anisotropy, the crystalline anisotropy induced by deposition of the ferromagnetic seed layer in the presence of a motion along a predetermined direction and in the presence of a predetermined magnetic field having the same predetermined direction, the crystalline anisotropy resulting in the free layer structure having an enhanced preferential magnetic direction.