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US 9,804,205 B2Granted
Current sense ratio compensation
AssigneePower Integrations, Inc.
InventorsRajko Duvjnak, William M. Polivka
Life of this patent
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Abstract
A method for sensing the current in a high-electron-mobility transistor (HEMT) that compensates for changes in a drain-to-source resistance of the HEMT. The method includes receiving a sense voltage representative of the current in the HEMT, receiving a compensation signal representative of a drain-to-source voltage of the HEMT, and outputting as a compensated sense voltage a linear combination of the sense voltage and the compensation signal.
Claims9
A device comprising:
- a power high-electron-mobility transistor (HEMT) comprising:
- a first main terminal;
- a second main terminal;
- and
- a first gate disposed to regulate conductivity between the first main terminal and the second main terminal of the power HEMT;
- a current sense HEMT comprising:
- a third main terminal coupled to the first main terminal of the power HEMT;
- a fourth main terminal;
- and
- a second gate disposed to regulate conductivity between third main terminal and the fourth main terminal of the current sense HEMT, wherein the second gate is coupled to the first gate of the power HEMT;
- a voltage sense HEMT comprising:
- a fifth main terminal coupled to the first main terminal of the power HEMT;
- a sixth main terminal;
- and
- a third gate disposed to regulate conductivity between fifth main terminal and the sixth main terminal, wherein the third gate is coupled to the first gate of the power HEMT;
- a current sense resistance coupled between the second main terminal of the power HEMT and the fourth main terminal of the current sense HEMT;
- a voltage sense resistance coupled between the second main terminal of the power HEMT and the sixth main terminal of the voltage sense HEMT;
- a first normally-off transistor coupled in a cascode arrangement with the power HEMT;
- a second normally-off transistor coupled in a cascode arrangement with the current sense HEMT;
- and
- a third normally-off transistor coupled in a cascode arrangement with the voltage sense HEMT.
18 more elements
Dependencies are inferred from the claim text.