Pressure sensor with support structure for non-silicon diaphragm
AssigneeDunan Sensing, LLC
InventorTom Kwa
Life of this patent
Estimating the term…
Abstract
A pressure sensor and methods of making a pressure sensor are described. In preferred embodiments, the pressure sensor is designed for low-pressure and high-sensitivity applications. In some embodiments, the pressure sensor comprises: a frame made from a single-crystal silicon starting material, the frame surrounding a cavity; a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material; a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material; and, a piezoresistor formed across an intersection of the frame and the support structure.
Claims24
A pressure sensor comprising:
- a frame made from a single-crystal silicon starting material, the frame surrounding a cavity;
- a diaphragm that covers the cavity, the diaphragm constructed from a separate layer of material deposited on the single-crystal silicon starting material;
- a support structure that spans the diaphragm wherein the support structure is formed from the single-crystal starting material;
- and,
- a piezoresistor formed across an intersection of the frame and the support structure.
A pressure sensor formed from a silicon-on-silicon (SOI) wafer comprising:
- a cavity formed in the silicon on a first side of the insulator and extending all the way to the insulator;
- a diaphragm formed within the cavity, the diaphragm formed from a separate layer of material deposited on the first side of the SOI wafer;
- a support structure formed from the silicon on a second opposite side of the insulator from the first side wherein the support structure spans the diaphragm and is formed by removing silicon on the second opposite side of the SOI wafer above the cavity and leaving the support structure;
- and,
- a piezoresistor formed across an intersection of the support structure and the SOI wafer at an outside edge of the diaphragm.
Dependencies are inferred from the claim text.