Method for producing group III-nitride wafers and group III-nitride wafers
AssigneeSixPoint Materials, Inc.
InventorsTadao Hashimoto, Edward Letts, Masanori Ikari
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Abstract
The present invention discloses a production method for group III nitride ingots or pieces such as wafers. To solve the coloration problem in the wafers grown by the ammonothermal method, the present invention composed of the following steps; growth of group III nitride ingots by the ammonothermal method, slicing of the ingots into wafers, annealing of the wafers in a manner that avoids dissociation or decomposition of the wafers. This annealing process is effective to improve transparency of the wafers and/or otherwise remove contaminants from wafers.
Claims30
A method for producing group III nitride crystalline pieces, comprising:
- (a) growing a group III nitride ingot by the ammonothermal method;
- (b) slicing a piece out of the ingot;
- (c) annealing the piece for a time at a temperature and pressure sufficient to reduce a contaminant in said piece;
- (d) concentrating the contaminant at a surface of the piece, and, subsequent to the annealing in step (c), removing an amount of the surface of the piece to reduce the amount of the contaminant in the piece.
Dependencies are inferred from the claim text.