Crucible for growing sapphire single crystal, and method for producing crucible for growing sapphire single crystal
AssigneeA.L.M.T. Corp.
InventorsMasahiro Katoh, Makoto Watanabe
Life of this patent
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Abstract
An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.
Claims16
A crucible for growing a sapphire single crystal, comprising:
- a base material containing molybdenum as a main component and having a crucible shape;
- and
- a coating layer with which an inner periphery of the base material is coated and which is formed of tungsten and inevitable impurities,
- wherein the coating layer has a surface roughness Ra of 5 μm or more and 20 μm or less,
- wherein a thickness of the coating layer is 50 μm or more and 300 μm or less, and
- wherein the coating layer has in itself 10 or more and less than 100 pores in a region corresponding to an area of 50×50 μm in a cross-section of the base material in an axial direction.
Dependencies are inferred from the claim text.