US 9,803,277 B1 · Reaction chamber passivation and selective deposition of metallic films

Abstract

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Claims19

Dependent claims

A process for passivating a reaction chamber prior to conducting a selective deposition process therein, the process comprising:

providing a reaction chamber that does not comprise a wafer;
depositing a passivation layer on an interior surface of the reaction chamber, wherein the interior surface may be exposed to a precursor during a subsequent selective deposition process;
providing at least one wafer comprising a first metallic surface and a second surface comprising silicon into the reaction chamber;
performing a selective deposition process on the at least one wafer within the reaction chamber, wherein the selective deposition process comprises at least one selective deposition cycle;
and
repeating the depositing a passivation layer step after a number of selective deposition cycles have been performed.

3 more elements

Dependencies are inferred from the claim text.

Reaction chamber passivation and selective deposition of metallic films

Life of this patent

Reaction chamber passivation and selective deposition of metallic films

Life of this patent

Abstract

Claims19