Method and apparatus for producing low-particle layers on substrates

An apparatus for producing low-particle layers on at least one moved substrate in a vacuum by means of magnetron atomization, comprising

• a) at least one magnetron sputtering device having at least one magnetron electrode of cylindrical source material, a generator, and a sputtering gas;
• wherein the cylindrical source material is free of erosion trenches;
• b) a cover;
• and
• c) a turntable having at least one substrate holder;
• wherein the cover closes the apparatus in a gas-tight manner and the turntable closes the magnetron sputtering device in a gas-tight manner, wherein the magnetron sputtering device is aligned so that it deposits material of the magnetron electrode in the direction of the substrate against gravity and the process pressure in the magnetron sputtering device lies in the range from 3·10−4 to 5·10−2 mbar, wherein the spacing between the turntable and the boundary walls of the magnetron sputtering device is to 0.1 to 5 mm, and wherein the substrate has a spacing from the magnetron electrode from 7 to 10 cm.

A method for producing low-particle layers on moved substrates in a vacuum chamber by means of at least one magnetron sputtering device, wherein the layers are formed from cylindrical source material of at least one magnetron electrode, wherein the following steps are provided:

• immobilizing the substrate by means of a substrate holder on a turntable;
• and
• depositing at least one layer of source material on the substrate utilizing a sputtering gas in at least one magnetron sputtering device;
• wherein the turntable rotates so that the magnetron sputtering device can be controlled and the cylindrical source material of the magnetron electrode is deposited onto the substrate upwardly against gravity, wherein the cylindrical source material is free of erosion trenches;
• and
• wherein the process pressure in the magnetron sputtering device lies in the range from 3·10−4 to 5·10−2 mbar;
• and wherein the partial pressure of the sputtering gas and/or of the reactive gas in the magnetron sputtering device is regulated and/or stabilized via a generator and wherein the spacing between the turntable and the boundary walls of the magnetron sputtering device amounts to 0.1 to 3 mm and wherein the substrate has a spacing from the magnetron electrode from 7 to 10 cm.

An apparatus for producing low-particle layers on at least one moved substrate in a vacuum by means of magnetron atomization, comprising

• a) at least one magnetron sputtering device having at least one magnetron electrode of cylindrical source material, a generator;
• sputtering gas, wherein the cylindrical source material is free of erosion trenches;
• b) a cover;
• c) a turntable having at least one substrate holder;
• wherein the cover closes the apparatus in a gas-tight manner and the turntable closes the magnetron sputtering device in a gas-tight manner, wherein the magnetron sputtering device is aligned so that it deposits material of the magnetron electrode in the direction of the substrate against gravity and the process pressure in the magnetron sputtering device lies in the range from 3·10−4 to 5·10−2 mbar and wherein the spacing between the turntable and the boundary walls of the magnetron sputtering device amounts to 0.1 to 3 mm and wherein the substrate has a spacing from the magnetron electrode from 7 to 10 cm.