Process kit of physical vapor deposition chamber and fabricating method thereof

A physical vapor deposition (PVD) chamber, comprising:

• a sputtering target comprising titanium aluminum alloy (TiAl) in contact with a process region;
• a cylindrical outer band having a top end sized to encircle a sputtering surface of the sputtering target and a bottom end sized to surround a substrate support;
• a base plate extending inward from the bottom end of the cylindrical outer band;
• and
• a cylindrical inner band coupled with the base plate and sized to encircle a peripheral edge of the substrate support,
• wherein the cylindrical outer band has a metal oxide current inducing layer disposed on an inner surface of the cylindrical outer band, wherein the metal oxide current inducing layer has a surface roughness (Rz) substantially in a range of 150-180 μm configured to induce an inductive current from the inner surface to the process region in contact with the titanium aluminum alloy.

A method of fabricating a process kit of a PVD chamber, comprising:

• providing a shield having a surface;
• providing metal particles into an arc-spraying apparatus, wherein the metal particles comprise aluminum, titanium, or a combination thereof;
• applying the arc-spraying apparatus to spray the metal particles on the surface of the shield, and controlling a voltage of the arc-spraying apparatus to control a surface roughness of the sprayed metal particles on the surface;
• and
• oxidizing the sprayed metal particles into a plurality of metal oxide particles to produce a surface roughness (Rz) on the surface of the shield, and the surface roughness (Rz) is substantially in a range of 90-120 μm.