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US 9,803,272 B2Granted
Deposition of silicon dioxide
AssigneeSPTS Technologies Limited
InventorsYun Zhou, Rhonda Hyndman, Stephen R Burgess
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Abstract
According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.
Claims12
A method of depositing SiO2 onto a substrate, comprising:
- supporting the substrate with an electrically conductive platen within a chamber of sputtering apparatus;
- providing a sputtering gas mixture consisting essentially of oxygen and krypton in the chamber of the sputtering apparatus by introducing the oxygen and krypton into the chamber at respective flow rates, wherein the ratio of the flow rate of the krypton in units of sccm to the flow rate of the oxygen in units of sccm is in the range of 0.1 to 0.9;
- providing a pulsed DC power to a target of the sputtering apparatus;
- and
- applying RF power to the platen to produce a DC bias;
- wherein the target comprises silicon, silicon is sputtered from the target by the sputtering gas mixture consisting essentially of krypton and oxygen, sputtered ions are accelerated to the substrate on the platen by the DC bias, and SiO2 is deposited on the substrate as a result.
3 more elements
A method of depositing SiO2 onto a substrate, comprising:
- supporting the substrate with an electrically conductive platen within a chamber of sputtering apparatus;
- introducing a sputtering gas mixture consisting essentially of oxygen and krypton into the chamber of the sputtering apparatus, wherein the percentage of the krypton in the sputtering gas mixture is at least 30%;
- providing a pulsed DC power to a target of the apparatus;
- and
- applying RF power to the platen to produce a DC bias,
- wherein the target comprises silicon, and
- silicon is sputtered from the target by the sputtering gas mixture, sputtered ions are accelerated to the substrate on the platen by the DC bias, and SiO2 is thereby deposited on the substrate so as to have a density on the substrate of at least 2.35 gcm−3 as a result.
4 more elements
Dependencies are inferred from the claim text.