Liquid composition for cleaning semiconductor device, and method for cleaning semiconductor device
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorKenji Shimada
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Abstract
A liquid semiconductor device cleaning composition used in a process of fabricating a semiconductor integrated circuit, for removing a hard mask or a dry etch residue while suppressing damage to a low-dielectric-constant interlayer dielectric film and cobalt or a cobalt alloy, where the liquid semiconductor device cleaning composition contains hydrogen peroxide at 10-30% by mass, potassium hydroxide at 0.005-0.7% by mass, aminopolymethylene phosphonic acid at 0.00001-0.01% by mass, at least one selected from amines and azoles at 0.001-5% by mass and water. A semiconductor device can be cleaned by bringing the liquid cleaning composition into contact with the semiconductor device.
Claims10
A liquid cleaning composition, comprising:
- hydrogen peroxide at 10-30% by mass;
- potassium hydroxide at 0.005-0.7% by mass;
- aminopolymethylene phosphonic acid at 0.00001-0.01% by mass;
- at least one selected from amines and azoles at 0.001-5% by mass;
- and
- water,
- wherein the amines are 1,2-propanediamine and/or 1,3-propanediamine.
A cleaning method for removing a hard mask and a dry etch residue in a semiconductor device,
- the method comprising bringing a liquid cleaning composition comprising hydrogen peroxide at 10-30% by mass, potassium hydroxide at 0.005-0.7% by mass, aminopolymethylene phosphonic acid at 0.00001-0.01% by mass, at least one selected from amines and azoles at 0.001-5% by mass and water, into contact with the semiconductor device,
- wherein the amines are 1,2-propanediamine and/or 1,3-propanediamine.
Dependencies are inferred from the claim text.