Process for manufacturing silicon carbide
AssigneeSaint-Gobain Ceramic Materials AS
InventorsBruno Aleonard, Simonpietro Di Pierro, Matthieu Schwartz
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Abstract
A process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction of silicon oxide by an excess of carbon, the process including electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source chosen from petroleum cokes and a source of silicon, especially a silica having a purity of greater than 95% of SiO2, in order to give rise, at a temperature above 1500° C., to the simplified reaction: SiO2+3C=SiC+2CO (1), wherein the carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is less than 2% by weight.
Claims12
A process for manufacturing SiC, wherein the emissions of polluting gases are minimized, comprising reducing silicon oxide by carbon according to an Acheson process, by electrically heating a resistor in a mixture of raw materials consisting of a carbon-based source selected from cokes and a silica having a purity of greater than 95% of SiO2, in order to give rise, at a temperature above 1500° C., to the simplified reaction:
- SiO2+3C=SiC+2CO (1),
- wherein said carbon-based source first undergoes a treatment for removing the contained hydrogen, so that its elemental hydrogen content (EHWC) is between 0.5% and 0.01% by weight, wherein the hydrogen removal treatment is a controlled heat treatment of the coke in an electric furnace, under an inert atmosphere or is a heat treatment in a fired furnace between 1000° C. and 1350° C.
Dependencies are inferred from the claim text.