Molybdenum (IV) amide precursors and use thereof in atomic layer deposition

Abstract

Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is —NR1R2; R1 and R2 are C1-C6-alkyl or hydrogen; R is C1-C6-alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoO2 films by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)]4 are disclosed herein.

Dependencies are inferred from the claim text.