US 9,793,889 B2 · Semiconductor device including a circuit to compensate for parasitic inductance

Abstract

A semiconductor device includes a first transistor, a second transistor coupled in parallel with the first transistor, and a first parasitic inductance between an emitter of the first transistor and an emitter of the second transistor. The semiconductor device includes a first circuit configured to provide a first gate driver signal to the first transistor based on a common driver signal and a second circuit configured to provide a second gate driver signal to the second transistor based on the common driver signal. The first circuit and the second circuit are configured to compensate for a voltage drop across the first parasitic inductance such that the first gate driver signal and the second gate driver signal are in phase with and at the same magnitude as the common driver signal.

Claims22

Dependent claims

A semiconductor device comprising:

a first transistor;
a second transistor coupled in parallel with the first transistor;
a first parasitic inductance between an emitter of the first transistor and an emitter of the second transistor;
a first circuit providing galvanic isolation and configured to provide a first gate driver signal to the first transistor based on a common driver signal;
and
a second circuit providing galvanic isolation and configured to provide a second gate driver signal to the second transistor based on the common driver signal,
wherein the first circuit and the second circuit are configured to compensate for a voltage drop across the first parasitic inductance such that the first gate driver signal and the second gate driver signal are in phase with and at the same magnitude as the common driver signal.

4 more elements

A power module comprising:

a first switching device;
a second switching device coupled in parallel with the first switching device;
a first parasitic inductance between the first and second switching devices;
a first circuit providing galvanic isolation and configured to receive a common driver signal and to provide a first signal to the first switching device for controlling the switching of the first switching device based on the common driver signal;
and
a second circuit providing galvanic isolation and configured to receive the common driver signal and to provide a second signal to the second switching device for controlling the switching of the second switching device based on the common driver signal,
wherein the first circuit and the second circuit are each configured to compensate for a voltage drop across the first parasitic inductance such that the first signal and the second signal are in phase with and at the same magnitude as the driver signal.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device including a circuit to compensate for parasitic inductance

Life of this patent

Semiconductor device including a circuit to compensate for parasitic inductance

Life of this patent

Abstract

Claims22