Semiconductor device for high-voltage circuit

A semiconductor device, comprising:

• a gate driver circuit that outputs a gate signal for driving a gate of at least one power device, the gate driver circuit having one of main terminals connected to a high potential side of a high voltage power supply having a common potential as a reference potential, the gate driver circuit having another of the main terminals connected to a load, that has a first low voltage power supply in which the other main terminal is a reference potential as a power supply, and that is disposed in an n-type first semiconductor region disposed in a front surface layer of a p-type semiconductor layer or on the p-type semiconductor layer;
• and
• a control circuit that outputs and transmits, to the gate driver circuit, the gate signal which is input from the outside, that has a second low voltage power supply in which the common potential is a reference potential as a power supply, and that is disposed in an n-type second semiconductor region disposed in the front surface layer of the semiconductor layer or on the semiconductor layer,
• wherein when a potential of the other main terminal is lower than the common potential, an impedance between the semiconductor layer and the common potential is higher than an impedance of a parasitic diode that is formed with the n-type first semiconductor region and the p-type semiconductor layer.