Gate driving circuit, semiconductor device, and power conversion device

A semiconductor device comprising:

• a switching device;
• and
• a gate driving circuit including a first transistor controlling on/off operation of a gate-on voltage applied to a gate electrode of the switching device;
• a second transistor controlling on/off operation of a gate-off voltage applied to the gate electrode of the switching device;
• a driving logic circuit controlling turn-on/turn-off of the first and second transistors;
• a first power source supplying the gate-on voltage to the gate electrode when the first transistor is turned on;
• a second power source supplying the gate-off voltage to the gate electrode when the second transistor is turned on;
• a first gate resistance variable circuit electrically connected between the first transistor and the gate electrode, the first gate resistance variable circuit including a plurality of field effect transistors connected in parallel;
• a second gate resistance variable circuit electrically connected between the second transistor and the gate electrode, the second gate resistance variable circuit including a plurality of field effect transistors connected in parallel;
• and a gate resistance control circuit controlling gate voltages of the plurality of field effect transistors of the first gate resistance variable circuit and gate voltages of the plurality of field effect transistors of the second gate resistance variable circuit.

A power conversion device comprising:

• a switching device;
• a gate driving circuit including a first transistor controlling on/off operation of a gate-on voltage applied to a gate electrode of the switching device;
• a second transistor controlling on/off operation of a gate-off voltage applied to the gate electrode of the switching device;
• a driving logic circuit controlling turn-on/turn-off of the first and second transistors;
• a first power source supplying the gate-on voltage to the gate electrode when the first transistor is turned on;
• a second power source supplying the gate-off voltage to the gate electrode when the second transistor is turned on;
• a first gate resistance variable circuit electrically connected between the first transistor and the gate electrode, the first gate resistance variable circuit including a plurality of field effect transistors connected in parallel;
• a second gate resistance variable circuit electrically connected between the second transistor and the gate electrode, the second gate resistance variable circuit including a plurality of field effect transistors is connected in parallel;
• a gate resistance control circuit controlling gate voltages of the plurality of field effect transistors of the first gate resistance variable circuit and gate voltages of the plurality of field effect transistors of the second gate resistance variable circuit;
• a capacitor electrically connected to the switching device;
• and
• a radiating plate radiating heat emitted from the switching device.