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US 9,793,686 B2Granted
Semiconductor device and fabrication method
AssigneeUCL Business PLC
InventorsHuiyun Liu, Andrew David Lee, Alwyn John Seeds
Life of this patent
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Abstract
A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top.
Claims23
A semiconductor laser device comprising:
- a silicon substrate;
- an epilayer formed on the substrate;
- a dot-in-well (DWELL) structure comprising multiple layers, each of the multiple layers comprising GaAs and an InGaAs alloy;
- and
- at least one layer of III-V compound, other than GaN, on the epilayer, wherein the epilayer comprises a compound of the formula:
- Al1−x[X]xAs
- wherein:
- X is at least one group III element other than Al;
- x is greater than or equal to 0;
- and
- x is less than or equal to 0.5.
8 more elements
A quantum dot laser comprising:
- a semiconductor laser device comprising:
- a silicon substrate;
- an epilayer formed on the silicon substrate;
- and
- at least one layer of III-V compound, other than GaN, on the epilayer, wherein the epilayer comprises a compound of the formula:
- Al1−x[X]xAs
- wherein:
- X is at least one group III element other than Al;
- x is greater than or equal to 0;
- and
- x is less than or equal to 0.5.
8 more elements
A method of fabricating a semiconductor laser device, said method comprising:
- providing a silicon substrate;
- epitaxially growing an epilayer on the substrate;
- growing a dot-in-well (DWELL) structure by growing multiple layers, each of the multiple layers comprising GaAs and an InGaAs alloy;
- and
- epitaxially growing at least one layer of III-V compound, other than GaN, on the epilayer, wherein the epilayer comprises a compound of the formula:
- Al1−x[X]xAs
- wherein:
- X is at least one group III element other than Al;
- x is greater than or equal to 0;
- and
- x is less than or equal to 0.5.
8 more elements
Dependencies are inferred from the claim text.