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US 9,793,685 B2Granted
Junctionless semiconductor light emitting devices
AssigneeThe Regents of the University of California
InventorsDeli Wang, Muchuan Yang, Chun Li
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Abstract
A junctionless light emitting device comprises a field emitter cathode, and a light emitting semiconductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC). The field emitter cathode is configured to inject electrons into the ohmic contact.
Claims19
A junctionless light emitting device comprising:
- a field emitter cathode that generates injection electrons;
- and
- a light emitting semiconductor material sandwiched between a floating ohmic contact (OC) and a Schottky contact (SC), an interface between the Schottky contact and the light emitting semiconductor material forming a Schottky junction;
- wherein the ohmic contact receives injection of the injection electrons from the field emitter cathode;
- and
- contacts for applying a voltage bias across the Schottky contact and the field emitter cathode to induce hole injection from the Schottky contact as a result of the injection electrons increasing a voltage drop between the ohmic contact and the Schottky contact and reducing a Schottky barrier of the Schottky junction.
3 more elements
A junctionless light emitting device comprising:
- a field emitter cathode;
- and
- a light emitting semiconductor material sandwiched between an ohmic contact (OC) that faces the injected electrons and a Schottky contact (SC);
- wherein the field emitter cathode is configured to inject electrons into the ohmic contact, and
- wherein the light emitting semiconductor material comprises nanowires.
2 more elements
Dependencies are inferred from the claim text.