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US 9,793,681 B2Granted
Semiconductor laser device
AssigneeHamamatsu Photonics K.K.
InventorsYuu Takiguchi, Yoshiro Nomoto
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Abstract
This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a common electrode 25, a plurality of pixel electrodes 21, and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.
Claims10
A semiconductor laser device comprising:
- a semiconductor laser chip;
- and
- a spatial light modulator which is optically connected to the semiconductor laser chip, wherein
- the semiconductor laser chip includes:
- an active layer,
- a pair of cladding layers sandwiching the active layer,
- a diffraction grating layer which is optically connected to the active layer, and
- a laser beam generation region in which the active layer is formed;
- wherein
- the diffraction grating layer is sandwiched by the cladding layers;
- the diffraction grating layer is a photonic crystal that has a periodic structure in which a refractive index is two-dimensionally varied;
- the diffraction grating layer includes:
- a basic layer and
- a different-refractive-index region being embedded into the basic layer for a predetermined depth and has a refractive index different therefrom,
- wherein the different-refractive-index region is arranged at a lattice position of a square lattice or of a triangle lattice;
- the diffraction grating layer is placed in the laser beam generation region and emits the laser beam in the thickness direction of the diffraction grating layer;
- the spatial light modulator is attached to the laser beam generation region;
- and
- the spatial light modulator includes:
- a common electrode,
- a plurality of pixel electrodes, and
- a liquid crystal layer arranged between the common electrode and the pixel electrodes,
- the spatial light modulator being attached to the semiconductor laser chip in such a manner that a laser beam output in a thickness direction of the diffraction grating layer is input through a transparent one of the common electrode and the pixel electrodes,
- modulating a phase of the laser beam with a driving voltage applied between the pixel electrodes and the common electrode, and
- reflecting and outputting, to the outside, the laser beam the phase of which is modulated.
22 more elements
A semiconductor laser device comprising:
- a semiconductor laser chip;
- and
- a spatial light modulator which is optically connected to the semiconductor laser chip,
- wherein
- the semiconductor laser chip includes:
- an active layer,
- a pair of cladding layers sandwiching the active layer,
- a diffraction grating layer which is optically connected to the active layer, and
- a laser beam generation region in which the active layer is formed;
- a deflection region which is adjacent to the laser beam generation region and which is configured to deflect the laser beam,
- wherein
- the diffraction grating layer is sandwiched by the cladding layers;
- the diffraction grating layer is a photonic crystal that has a periodic structure in which a refractive index is two-dimensionally varied;
- the diffraction grating layer includes:
- a basic layer and
- a different-refractive-index region being embedded into the basic layer for a predetermined depth and has a refractive index different therefrom,
- wherein the different-refractive-index region is arranged at a lattice position of a square lattice or of a triangle lattice;
- the diffraction grating layer is extended in such a manner as to be placed in both of the laser beam generation region and the deflection region, and
- the deflection region is surrounded by the laser beam generation region,
- the spatial light modulator is attached to the deflection region;
- and
- the spatial light modulator includes:
- a common electrode,
- a plurality of pixel electrodes, and
- a liquid crystal layer arranged between the common electrode and the pixel electrodes,
- the spatial light modulator being attached to the semiconductor laser chip in such a manner that a laser beam output in a thickness direction of the diffraction grating layer is input through transparent one of the common electrode and the pixel electrodes,
- modulating a phase of the laser beam with a driving voltage applied between the pixel electrodes and the common electrode, and
- reflecting and outputting, to the outside, the laser beam the phase of which is modulated.
25 more elements
Dependencies are inferred from the claim text.