Electrode surface modification layer for electronic devices
AssigneeCambridge Display Technology Limited
InventorChristopher Newsome
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Abstract
There is disclosed a method for preparing a modified electrode for an organic electronic device, wherein said modified electrode comprises a surface modification layer, comprising: (i) depositing a solution comprising M(tfd)3, wherein M is Mo, Cr or W, and at least one solvent onto at least a part of at least one surface of said electrode; and (ii) removing at least some of said solvent to form said surface modification layer on said electrode.
Claims16
A method for preparing a modified electrode for an organic electronic device, wherein said modified electrode comprises a surface modification layer, comprising:
- (i) depositing a solution comprising M(tfd)3, wherein M is Mo, Cr or W, and at least one solvent onto at least a part of at least one surface of an electrode;
- and
- (ii) removing at least some of said solvent to form said surface modification layer on said electrode.
An organic thin film transistor comprising source and drain electrodes defining a channel region therebetween;
- a surface modification layer comprising M(tfd)3, wherein M is Mo, Cr or W, in contact with at least a part of at least one surface of said source and drain electrodes;
- an organic semiconducting layer extending across the channel region and in contact with the surface modification layer;
- a gate electrode;
- and a gate dielectric between the organic semiconducting layer and the gate electrode.
A modified electrode comprising an electrode;
- and a surface modification layer in contact with at least a part of at least one surface of said electrode, wherein said surface modification layer comprises M(tfd)3, wherein M is Mo, Cr or W.
Dependencies are inferred from the claim text.