Nanostructured organic memristor/memcapacitor of making with an embedded low-to-high frequency switch and a method of inducing an electromagnetic field thereto

An organic memresistor/memcapacitor of inducing an electromagnetic field comprising of

• (a) the first electrode having an organic conductive membrane on top that made of arrays of nanostructure vertical and horizontal bridges with smaller ad larger toroid shaped cyclodextrin, by self-assembling cross-linked copolymers;
• (b) the larger toroid cavities contain different electronegativity functional groups that mimic the function of acetylcholinesterase (ACHE) and also mimic its active sites in the cylindrical gorge;
• (c) the smaller hollow toroid shaped cavities comprise at least one or multiple acetyl groups, at least one or multiple imidazole imidazole groups and at least one or more hydroxyl groups;
• (d) cross-linking polymer PEG and copolymer PYP form the first conductive membrane with cross-bar bridge and nanopore structure;
• (e) an organic material o-NPA forms a linen lining the larger toroid shaped cyclodextrin in cross bars perpendicular to the smaller toroid shaped cyclodextrin with nanometer space air gap between them;
• (f) The second electrode having an organic conductive membrane on top made of arrays of nanostructure tall vertical bridges and horizontal bridges that compromise toroid shaped cyclodextrin contains at least one or more imidazole groups, at least one or more acetyl groups, hydroxide groups forming lattice shape membrane by self-assembling cross-linked with polymer PEG and PVP copolymers;
• (g) with a lack of hydrophobic reagent o-NPA in the ACHE gorge membrane associated with the second electrode to lock active sites in place, the second electrode associated membrane is unstable except upon application of a DC voltage cross the second MEA separated by an mobile dopant barrier dielectric material and connected with a bare Pt electrode having no membrane on it in 1M methanol, when turning the terminals horizontally in various angles, a phenomena was recorded, that a drastic exponentially increase currents flow occurred in the bipolar ACHE gorge with an electron-relay circular fashion that produces electromagnetism flux at the quantum Fermi Resonance point;
• (h) the memresistor/memcapacitor device cannot biphasic symmetric discharge at 30 mA at high frequency, hence it lacks of the opportunity to make low-to-high frequency switch and consumes more energy than the BHE device;
• (i) The memresistor/memcapacitor device having a bridge vertical height between 47.3-51.5 nm with the length of 940 nm and the horizontal bridge width is 200-600 nm and height is 44.4 nm, and length is 1100 nm through the AFM section analysis compared with the BHE memresistor/memcapacitor device's horizontal bridge width in 330 nm and length in 1.4 pm with a depth of 60.2 nm and the vertical pores oriented on the gold chip with a height of 3 nm and pore diameter 12-18 nm by cross section analysis and for the BHE device, the 3D lattice between the flat bridge and the top rim of the surface of the pores has air gaps of 40-56 nm.