Light-emitting device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsOsamu Nakamura, Gen Fujii, Fuminori Tateishi
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Abstract
The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.
Claims17
A light-emitting device comprising:
- a first substrate;
- a first transistor and a second transistor each over the first substrate, each of the first transistor and the second transistor comprising:
- a gate electrode comprising a conductive material;
- a semiconductor film;
- and
- a gate insulating layer between the gate electrode and the semiconductor film;
- a first electrode electrically connected to one of a source and a drain of the second transistor;
- an insulating layer which covers an end portion of the first electrode;
- a spacer over the insulating layer;
- an light emitting layer over the first electrode;
- a second electrode over the light emitting layer;
- a second substrate over the second electrode;
- and
- a resin material which fills a space between the second electrode and the second substrate,
- wherein one of a source and a drain of the first transistor is electrically connected to the gate electrode of the second transistor,
- wherein the spacer is between the second substrate and the insulating layer,
- wherein the spacer overlaps with at least part of the second transistor,
- wherein the resin material is in contact with the spacer.
A television comprises:
- a tuner configured to receive a signal;
- a circuit configured to convert the signal;
- and
- a light-emitting device comprising:
- a first substrate;
- a first transistor and a second transistor each over the first substrate, each of the first transistor and the second transistor comprising:
- a gate electrode comprising a conductive material;
- a semiconductor film;
- and
- a gate insulating layer between the gate electrode and the semiconductor film;
- a first electrode electrically connected to one of a source and a drain of the second transistor;
- an insulating layer which covers an end portion of the first electrode;
- a spacer over the insulating layer;
- an light emitting layer over the first electrode;
- a second electrode over the light emitting layer;
- a second substrate over the second electrode;
- and
- a resin material which fills a space between the second electrode and the second substrate,
- wherein one of a source and a drain of the first transistor is electrically connected to the gate electrode of the second transistor,
- wherein the spacer is between the second substrate and the insulating layer,
- wherein the spacer overlaps with at least part of the second transistor,
- wherein the resin material is in contact with the spacer.
Dependencies are inferred from the claim text.