Memristor structures
AssigneeHewlett Packard Enterprise Development LP
InventorsShih-Yuan Wang, Jianhua Yang, Minxian Max Zhang, Alexandre M. Bratkovski, R. Stanley Williams
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Abstract
A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.
Claims17
A memristor structure comprising:
- a first electrode;
- a second electrode;
- a buffer layer disposed on the first electrode and coated on a center of and not on edges of the first electrode;
- and
- a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a semiconducting filament that extends from the second electrode to the buffer layer and to form between the semiconducting filament and the buffer layer a junction selected from the group consisting of a Schottky-like contact and a heterojunction.
A method of fabricating a memristor structure, the method comprising:
- providing a first electrode;
- providing a buffer layer or a switching layer on the first electrode as a first layer, the buffer layer coated on a center of and not on edges of the first electrode;
- providing a second electrode on top of the switching layer,
- wherein the switching layer is to form, when a voltage is applied, a semiconducting filament that extends from the second electrode to the buffer layer and to form between the semiconducting filament and the buffer layer a junction selected from the group consisting of a Schottky-like contact and a heterojunction.
A memristor structure comprising:
- a first electrode;
- a second electrode;
- a buffer layer on the first electrode, the buffer layer coated on a center of and not on edges of the first electrode;
- and
- a switching layer between the second electrode and the buffer layer to form, in response to an applied voltage, a semiconducting path between the second electrode and the buffer layer and to form between the semiconducting path and the buffer layer a junction selected from the group consisting of a Schottky-like contact and a heterojunction.
Dependencies are inferred from the claim text.