Method for forming a hard mask pattern and method for manufacturing a semiconductor device using the same

A method for manufacturing a semiconductor device, the method comprising:

• forming an etch target layer including at least one of a metal or a magnetic material on a substrate;
• forming a hard mask pattern on the etch target layer in a temperature range between about 20° C. and about 275° C.;
• and
• etching the etch target layer using the hard mask pattern as an etch mask to form a target pattern,
• wherein the forming of the hard mask pattern comprises:
• forming a hard mask layer on the etch target layer;
• forming a photoresist pattern on the hard mask layer;
• forming an oxidized portion in an upper portion of a region of the hard mask layer by using the photoresist pattern as a mask;
• and
• patterning the hard mask layer using the oxidized portion as an etch mask.

A method for manufacturing a semiconductor device, the method comprising:

• forming an etch target layer on a substrate, the etch target layer comprising a free magnetic layer, a pinned magnetic layer, and a tunnel barrier layer disposed between the free and pinned magnetic layers;
• forming a hard mask pattern on the etch target layer by:
• forming a hard mask layer on the etch target layer,
• forming a photoresist pattern on the hard mask layer,
• forming an oxidized portion in an upper portion of a region of the hard mask layer by using the photoresist pattern as a mask, and
• patterning the hard mask layer using the oxidized portion as an etch mask;
• and
• etching the etch target layer using the hard mask pattern as an etch mask to form a plurality of magnetic tunnel junction (MTJ) patterns from the free magnetic layer, the pinned magnetic layer, and the tunnel barrier layer.