Magnetoresistive element and magnetic memory
AssigneeKabushiki Kaisha Toshiba
InventorsYushi Kato, Tadaomi Daibou, Yuichi Ohsawa, Shumpei Omine, Naoki Hase
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Abstract
A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.
Claims19
A magnetoresistive element comprising:
- a first magnetic layer;
- a second magnetic layer;
- a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer;
- a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer;
- and
- a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer,
- wherein the first magnetic layer contains Mn and at least one element of Al, Ge, or Ga.
A magnetoresistive element comprising:
- a first magnetic layer:
- a second magnetic layer;
- a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer;
- a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer;
- and
- a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer,
- wherein the first magnetic layer contains Mn, Ga, and at least one element of Al, Ge, Ir, Cr, Co, Pt, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb, or Dy.
A magnetoresistive element comprising:
- a first magnetic layer;
- a second magnetic layer;
- a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer;
- and
- a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the first nonmagnetic layer,
- wherein the first magnetic layer contains Mn and at least one element of AL, Ge, or Ga.
A magnetoresistive element comprising:
- a first magnetic layer:
- a second magnetic layer;
- a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer;
- and
- a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the first nonmagnetic layer,
- wherein the first magnetic layer contains Mn, Ga, and at least one element of Al, Ge, Ir, Cr, Co, Pt, Ru, Pd, Rh, Ni, Fe, Re, Au, Cu, B, C, P, Gd, Tb, or Dy.
Dependencies are inferred from the claim text.