Semiconductor light-emitting device

A semiconductor light-emitting device comprising:

• a substrate having a mounting surface and conductor patterns formed on the mounting surface;
• a plurality of semiconductor light-emitting chips each having a bottom surface and at least one bottom chip electrode located on the bottom surface, including a top surface and a side surface, and mounted on the mounting surface of the substrate via solder bumps, and the bottom chip electrode electrically connected to at least one of the conductor patterns of the substrate via at least one of the solder bumps, wherein the plurality of semiconductor light-emitting chips aligns in a substantially straight line or is located in a matrix array, and each of intervals between adjacent chips of the semiconductor light-emitting chips is 400 micrometers or less;
• a transparent material layer having a top surface, a bottom surface and a side surface being located over the top surface of the semiconductor light-emitting chips, the bottom surface of the transparent material layer being larger than the top surface of the semiconductor light-emitting chips, the top surface of the transparent material layer being smaller than the bottom surface of the transparent material layer, and the side surface of the transparent material layer includes at least one portion inclining from the bottom surface toward the top surface of the transparent material layer so as to approach toward at least another portion of the side surface located opposite the at least one portion of the side surface of the transparent material layer;
• a wavelength converting layer having a top surface and a side surface disposed between the bottom surface of the transparent material layer and the side surface of the semiconductor light-emitting chips, contacting with the bottom surface of the transparent material layer and the side surface of the semiconductor light-emitting chips, and therefore including a surrounding portion to surround the side surface of the semiconductor light-emitting chips with the wavelength converting layer, and the side surface of the wavelength converting layer extending from the side surface of the semiconductor light-emitting chips toward the bottom surface of the transparent material layer;
• a frame located adjacent the mounting surface of the substrate, and surrounding the wavelength converting layer and the transparent material layer;
• and
• a reflective material layer having a top surface disposed between the frame and the side surfaces of the wavelength converting layer and the transparent material layer and between each of the bottom surfaces of the semiconductor light-emitting chips and the mounting surface of the substrate while surrounding the solder bumps, wherein an area of the top surface of the transparent material layer is smaller than that of the top surface of the wavelength converting layer, and each of angles between the bottom surface and the at least one portion of the side surface of the transparent material layer, between the bottom surface of the transparent material layer and the side surface of the wavelength converting layer and between the side surface of the wavelength converting layer and the side surface of the semiconductor light-emitting chips is smaller than a right angle.