Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same

A light-emitting diode (LED) module, comprising:

• a mount;
• and
• an LED disposed on the mount, the LED comprising:
• a substrate;
• a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
• a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure, the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure;
• and
• a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength converting layer,
• wherein at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR, and
• wherein the DBR comprises alternately stacked insulating layers with different refractive indices.