Optoelectronic semiconductor chip and optoelectronic semiconductor component
AssigneeOSRAM Opto Semiconductors GmbH
InventorAdam Bauer
Life of this patent
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Abstract
An optoelectronic semiconductor chip has a non-rectangular, parallelogram-shaped top surface and an active zone, which is at a distance from the top surface and runs parallel to the top surface at least in places. The top surface includes a radiation exit surface, through which electromagnetic radiation generated during operation in the active zone emerges. The radiation exit surface has at least four vertices. The top surface includes at least one triangular connection area via which the active zone is electrically connectable.
Claims16
An optoelectronic semiconductor component comprising:
- an optoelectronic semiconductor chip;
- and
- a conversion element arranged at a radiation exit surface of the optoelectronic semiconductor chip,
- wherein the conversion element is rectangular,
- wherein the conversion element completely covers the radiation exit surface,
- wherein the optoelectronic semiconductor chip comprises a non-rectangular, parallelogram-shaped top surface and an active zone, which is at a distance from the top surface and runs parallel to the top surface at least in places,
- wherein the top surface comprises the radiation exit surface, through which electromagnetic radiation generated during operation in the active zone emerges,
- wherein the radiation exit surface has at least four vertices,
- wherein the top surface comprises at least one triangular connection area via which the active zone is electrically connectable,
- wherein the at least one triangular connection area directly adjoins the radiation exit surface, and wherein the at least one triangular connection area directly adjoins a rim of the optoelectronic semiconductor chip.
An optoelectronic semiconductor chip comprising:
- a non-rectangular, parallelogram-shaped top surface;
- and
- an active zone, which is at a distance from the top surface and runs parallel to the top surface at least in places,
- wherein the top surface comprises a radiation exit surface, through which electromagnetic radiation generated during operation in the active zone emerges,
- wherein the radiation exit surface has at least four vertices,
- wherein the top surface comprises a triangular connection area via which the active zone is electrically connectable,
- wherein the triangular connection area directly adjoins the radiation exit surface, and wherein the triangular connection area directly adjoins a rim of the optoelectronic semiconductor chip.
An optoelectronic semiconductor chip comprising:
- a non-rectangular, parallelogram-shaped top surface;
- and
- an active zone, which is at a distance from the top surface and runs parallel to the top surface at least in places,
- wherein the top surface comprises a radiation exit surface, through which electromagnetic radiation generated during operation in the active zone emerges,
- wherein the radiation exit surface has at least four vertices,
- wherein the top surface comprises exactly two triangular connection areas via which the active zone is electrically connectable,
- wherein the top surface comprises exactly one radiation exit surface,
- wherein the radiation exit surface and the two triangular connection areas are arranged at mutually opposite sides of the top surface,
- wherein the radiation exit surface is arranged between the two triangular connection areas,
- wherein the two triangular connection areas each directly adjoins the radiation exit surface, and wherein the two triangular connection areas each directly adjoins a rim of the optoelectronic semiconductor chip.
Dependencies are inferred from the claim text.