Metallic contact for optoelectronic semiconductor device
AssigneeSensor Electronic Technology, Inc.
InventorsAlexander Lunev, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Abstract
A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
Claims20
An ohmic contact to a semiconductor layer in an optoelectronic device, the ohmic contact comprising:
- a barrier layer located on a surface of the semiconductor layer;
- a two dimensional free carrier gas formed at a heterointerface of the barrier layer and the semiconductor layer;
- and
- a metal layer located adjacent to the barrier layer, wherein the metal layer includes a plurality of protruding metallic elements that penetrate through the barrier layer into the two dimensional free carrier gas formed at the heterointerface.
A structure for an optoelectronic device, comprising:
- a semiconductor layer;
- a barrier layer located on the semiconductor layer;
- a three dimensional free carrier gas formed at a heterointerface of the barrier layer and the semiconductor layer;
- and
- a metal layer located adjacent to the barrier layer, wherein the metal layer includes a plurality of protruding metallic elements that penetrate through the barrier layer into the three dimensional free carrier gas formed at the heterointerface.
A device, comprising:
- a light emitting heterostructure semiconductor layer;
- and
- a contact to the heterostructure semiconductor layer located over the heterostructure semiconductor layer, wherein the contact includes:
- a semiconductor contact structure adjacent to the heterostructure semiconductor layer, wherein the semiconductor contact structure comprises a semiconductor layer and a barrier layer located on a surface of the semiconductor layer, wherein the barrier layer forms a two dimensional free carrier gas at a heterointerface of the barrier layer and the semiconductor layer;
- and
- a plurality of contact areas formed of a metal and separated by a set of voids over the semiconductor contact structure, wherein the metal layer includes a plurality of protruding metallic elements that penetrate through barrier layer into the two dimensional free carrier gas formed at the heterointerface.
Dependencies are inferred from the claim text.