Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.

Dependencies are inferred from the claim text.