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US 9,793,432 B2Granted
Light emitting devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-Youn Kim, Bok-ki Min, Hyun-gi Hong, Jae-won Lee
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Abstract
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR and regions between patterns of the DBR.
Claims16
A method of manufacturing a light emitting device, the method comprising:
- forming a metal buffer layer on a silicon substrate;
- forming an XY material layer on the metal buffer layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of B and B2;
- and
- forming a GaN layer on the XY material layer,
- wherein the XY material layer has a first lattice constant and the GaN layer has a second lattice constant greater than the first lattice constant,
- wherein the XY material layer applies compressive strain to the GaN layer,
- wherein a distributed Bragg reflector (DBR) is between the metal buffer layer and the XY material layer.
4 more elements
A method of manufacturing a light emitting device, the method comprising:
- forming a metal buffer layer on a silicon substrate;
- forming an XY material layer on the metal buffer layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of B and B2;
- and
- forming a plurality of holes in the XY material layer, each hole of the plurality of holes having a diameter in a range of 10 nm to 1 μm.
1 more element
A method of manufacturing a light emitting device, the method comprising:
- forming a metal buffer layer on a silicon substrate;
- forming an XY material layer on the metal buffer layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of N, B, and B2;
- and
- forming a plurality of holes in the XY material layer, such that the metal buffer layer includes a plurality of holes at a position corresponding to the plurality of holes in the XY material layer.
1 more element
Dependencies are inferred from the claim text.