Growth layer for photovoltaic applications
AssigneePilkington Group Limited
InventorNeil Mcsporran
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Abstract
Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.
Claims32
A substrate bearing a stack of layers as the back contact in a molybdenum photovoltaic device, said back contact comprising in order from the substrate:
- a barrier layer comprising at least one of:
- SixNy, SiO2, SnO2, SiCO and TiO2;
- a primer layer;
- a layer of ZnO;
- and
- a layer of molybdenum, wherein the molybdenum is deposited directly on the layer of ZnO;
- the ZnO layer having a thickness, t, of 0 nm<t<50 nm;
- wherein the ZnO layer is deposited directly on the primer layer;
- and
- the primer layer is deposited directly on the barrier layer and comprises TiO2 or ZnSnOx.
A substrate bearing a stack of layers as the back contact in a molybdenum photovoltaic device, said back contact comprising in order from the substrate:
- a barrier layer;
- a layer of ZnO;
- and
- a layer of molybdenum, wherein the molybdenum is deposited directly on the layer of ZnO;
- the ZnO layer having a thickness, t, of 0 nm<t<50 nm;
- wherein the ZnO layer is deposited directly on the barrier layer;
- and
- the barrier layer comprises at least one of:
- SnO2, SiCO and TiO2.
A method of controlling the crystal orientation of a molybdenum layer on a substrate comprising the steps of:
- depositing a barrier layer comprising at least one of:
- SixNy, SiO2, SnO2, SiCO and TiO2 on the substrate,
- depositing a primer layer comprising TiO2 or ZnSnOx directly on the barrier layer,
- depositing a layer of ZnO directly on the primer layer, and
- depositing a layer of molybdenum directly on the layer of ZnO;
- wherein a thickness, t, for the ZnO layer is selected according to the desired crystal orientation wherein 0 nm<t<50 nm.
Dependencies are inferred from the claim text.