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US 9,793,419 B2Granted
Silicon photoelectric multiplier with multiple read-out
AssigneeMax-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
InventorsBoris Anatolievich Dolgoshein, Masahiro Teshima, Razmick Mirzoyan, Anatoliy Dmitrievich Pleshko, Pavel Zhorzhevich Buzhan, Valentin Nikolaevich Staroseltsev, Vladimir Alexandrovich Kaplin, Stifutkin Alexey Anatolievich
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Abstract
A silicon-based photoelectric multiplier comprises a plurality of cells and a number of read-out lines, and at least one of a number read-out pads or a ring-like line, wherein the plurality of cells may be divided into a number of segments, and each one of the read-out lines may be electrically connected with the cells of at least one segment.
Claims20
A silicon-based photoelectric multiplier, comprising:
- a plurality of silicon-based cells, the plurality of silicon-based cells being fabricated on one common silicon substrate and respective silicon-based cells comprising a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, the second semiconductor layer formed on the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer form a first p-n junction, where:
- the plurality of silicon-based cells is divided into a number of segments, respective segments including a sub-plurality of silicon-based cells;
- a plurality of read-out lines are electrically connected with one or more silicon-based cells of at least one segment;
- and
- a contiguous and closed ring-like electrical line surrounds the plurality of silicon-based cells so that respective silicon-based cells of the plurality of silicon-based cells are arranged inside the ring-like electrical line and the plurality of read-out lines are electrically connected with the ring-like electrical line, where all silicon-based cells in the photoelectric multiplier are surrounded by the ring-like electrical line.
2 more elements
A silicon-based photoelectric multiplier, comprising:
- a plurality of silicon-based cells, the plurality of silicon-based cells being fabricated on one common silicon substrate and respective silicon-based cells comprising a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, the second semiconductor layer formed on the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer form a first p-n junction, where:
- the plurality of silicon-based cells is divided into a number of segments, respective segments including a sub-plurality of silicon-based cells;
- a plurality of read-out lines are electrically connected with one or more silicon-based cells of at least one segment;
- and
- a contiguous and closed ring-like electrical line surrounds the plurality of silicon-based cells so that respective silicon-based cells of the plurality of silicon-based cells are arranged inside the ring-like electrical line and the plurality of read-out lines are electrically connected with the ring-like electrical line, where all silicon-based cells in the photoelectric multiplier are surrounded by the ring-like electrical line, wherein the ring-like electrical line is only configured to supply a voltage to the plurality of silicon-based cells and to supply electrical signals from the plurality of silicon-based cells to an electronic circuit for detecting and evaluating the electrical signals.
2 more elements
A silicon-based photoelectric multiplier, comprising:
- a plurality of silicon-based cells, the plurality of silicon-based cells being fabricated on one common silicon substrate and respective silicon-based cells comprising a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, the second semiconductor layer formed on the first semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer form a first p-n junction, where:
- the plurality of silicon-based cells is divided into a number of segments, respective segments including a sub-plurality of silicon-based cells;
- a plurality of read-out lines are electrically connected with one or more silicon-based cells of at least one segment;
- and
- a number of read-out pads, each one of the read-out pads being electrically connected with one read-out line,
- wherein the read-out pads are only configured to supply a voltage to the plurality of silicon-based cells and to supply electrical signals from the plurality of silicon-based cells to an electronic circuit for detecting and evaluating the electrical signals.
3 more elements
Dependencies are inferred from the claim text.