Back to results
US 9,793,417 B2Granted
Nanowire nanoelectromechanical field-effect transistors
AssigneeThe Regents of the University of California
InventorsJi Hun Kim, Jie Xiang, Zack Ching-Yang Chen, Soonshin Kwon
Life of this patent
Estimating the term…
Abstract
A three-terminal nano-electro-mechanical field-effect transistor (NEMFET) includes a source electrode, a gate electrode, a drain electrode and a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode. The nanoelectromechanically suspended channel includes a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode. A thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating.
Claims15
A device comprising:
- a three-terminal nano-electro-mechanical field-effect transistor (NEMFET) comprising:
- a support substrate having a planar upper surface;
- a source electrode disposed on the planar upper surface of the support substrate;
- a drain electrode disposed on the planar upper surface of the support substrate;
- a gate electrode disposed on the planar upper surface of the support substrate between the source electrode and the drain electrode;
- a nanoelectromechanically suspended channel, the nanoelectromechanically suspended channel comprising a moveable nanowire, the moveable nanowire having two opposing ends that are connected and vertically fixed to the source electrode and the drain electrode, and
- a gap between the nanowire and a top surface of the gate electrode;
- wherein a portion of the nanowire over the gate electrode is configured to deflect in a direction perpendicular to the planar upper surface of the support substrate, and a dielectric coating is deposited on the top surface of the gate electrode facing the nanowire as a gate oxide.
5 more elements
A device comprising:
- a three-terminal nano-electro-mechanical field-effect transistor (NEMFET) comprising:
- a source electrode;
- a gate structure comprising a gate electrode;
- a drain electrode;
- and
- a nanoelectromechanically suspended channel bridging the source electrode and the drain electrode, the nanoelectromechanically suspended channel comprises a moveable nanowire and a dielectric coating on a surface of the nanowire facing the gate electrode, wherein:
- a thickness of a gap between the nanowire and the gate electrode is determined by a thickness of the dielectric coating, and
- during operation of the device, the nanowire is configured to change between a first state and a second state in which the dielectric coating of the nanowire is in contact with the gate structure.
5 more elements
Dependencies are inferred from the claim text.