Semiconductor device and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsJunghyun Kim, Kiwan Ahn
Life of this patent
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Abstract
A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor layer, a gate electrode on the semiconductor layer, a first insulating layer between the semiconductor layer and the gate electrode; a second insulating layer on the gate electrode, source and drain electrodes corresponding to both ends of the semiconductor layer and disposed on the second insulating layer, and a doping layer disposed along contact holes of the first and second insulating layers, which expose the both ends of the semiconductor layer, such as, between the both ends of the semiconductor layer and the source and drain electrodes.
Claims17
A semiconductor device comprising:
- a semiconductor layer;
- a gate electrode on the semiconductor layer;
- a first insulating layer between the semiconductor layer and the gate electrode;
- a second insulating layer on the gate electrode;
- source and drain electrodes corresponding to both ends of the semiconductor layer and disposed on the second insulating layer;
- and
- a doping layer disposed along a contact hole of the first and second insulating layers, the contact hole exposing the both ends of the semiconductor layer, wherein the doping layer having a multilayer structure, and wherein, in the doping layer, a dopant concentration of a layer close to the semiconductor layer is relatively low and a dopant concentration of a layer close to the source and drain electrodes is relatively high.
A method of manufacturing a semiconductor device, the method comprising:
- forming a semiconductor layer on a substrate;
- forming a first insulating layer on the semiconductor layer;
- forming a gate electrode on the semiconductor layer;
- forming a second insulating layer on the gate electrode;
- and
- forming a doping layer, a source electrode, and a drain electrode in contact holes of the first and second insulating layers, which expose both ends of the semiconductor layer, and on the second insulating layer around the contact holes, wherein the doping layer having a multilayer structure, and wherein, in the doping layer, a dopant concentration of a layer close to the semiconductor layer is relatively low and a dopant concentration of a layer close to the source and drain electrodes is relatively high.
Dependencies are inferred from the claim text.