Oxide semiconductor film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
To provide a crystalline oxide semiconductor film, an ion is made to collide with a target including a crystalline In—Ga—Zn oxide, thereby separating a flat-plate-like In—Ga—Zn oxide in which a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including an indium atom and an oxygen atom, and a third layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order; and the flat-plate-like In—Ga—Zn oxide is irregularly deposited over a substrate while the crystallinity is maintained.
Claims18
A display device comprising:
- a gate electrode;
- an oxide semiconductor film;
- a gate insulating layer between the gate electrode and the oxide semiconductor film;
- a source electrode and a drain electrode each electrically connected to the oxide semiconductor film;
- an insulating layer over the source electrode and the drain electrode;
- and
- an electrode over the insulating layer electrically connected to one of the source electrode and the drain electrode,
- wherein the oxide semiconductor film comprises a plurality of plate particles,
- wherein the plurality of plate particles are arranged irregularly, and
- wherein the plurality of plate particles each have regularity in atomic arrangement.
A display device comprising:
- a gate electrode;
- a gate insulating layer over the gate electrode;
- an oxide semiconductor film over the gate insulating layer;
- a source electrode and a drain electrode each electrically connected to the oxide semiconductor film;
- an insulating layer over the source electrode and the drain electrode;
- and
- an electrode over the insulating layer electrically connected to one of the source electrode and the drain electrode,
- wherein the oxide semiconductor film comprises a plurality of plate particles each including indium, gallium, zinc, and oxygen,
- wherein the plurality of plate particles are arranged irregularly, and
- wherein the plurality of plate particles each have regularity in atomic arrangement.
A display device comprising:
- a transistor comprising:
- a gate electrode,
- an oxide semiconductor film,
- a gate insulating layer between the gate electrode and the oxide semiconductor film, and
- a source electrode and a drain electrode electrically connected to the oxide semiconductor film;
- and
- a capacitor comprising:
- a first electrode,
- one of the source electrode and the drain electrode, and
- a first insulating layer between the first electrode and the one of the source electrode and the drain electrode;
- a second insulating layer over the transistor and the capacitor;
- and
- an electrode over the second insulating layer electrically connected to the one of the source electrode and the drain electrode,
- wherein the oxide semiconductor film comprises a plurality of plate particles,
- wherein the plurality of plate particles are arranged irregularly, and
- wherein the plurality of plate particles each have regularity in atomic arrangement.
Dependencies are inferred from the claim text.