Metal oxide thin film transistor having channel protection layer
AssigneeBoe Technology Group Co., Ltd.
InventorsLi Zhang, Meili Wang, Fengjuan Liu
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Abstract
The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer of the thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited; depositing a source and drain electrode layer and patterning it by a dry etching to form a source electrode and a drain electrode; and etching or passivating the protective layer located in a back channel region of the source electrode and the drain electrode. In addition, the present disclosure also discloses a thin film transistor produced by the above method, and an array substrate.
Claims17
A method for producing a metal oxide thin film transistor having a protective layer in a back channel region, comprising the steps of:
- forming a protective layer on an active layer of the metal oxide thin film transistor and patterning the protective layer along with the active layer when the active layer is deposited;
- depositing a source and drain electrode layer and patterning the source and drain electrode layer by a dry etching to form a source electrode and a drain electrode, wherein bottom surfaces of the source electrode and the drain electrode are located at a same height level as a bottom surface of the active layer, and the source electrode and the drain electrode respectively partially cover the patterned protective layer and the active layer at both sides of the patterned protective layer and the active layer;
- etching or passivating the protective layer located in the back channel region of the source electrode and the drain electrode,
- wherein the protective layer is made from a metal material.
Dependencies are inferred from the claim text.