Manufacturing method and structure of oxide semiconductor TFT substrate

A structure of an oxide semiconductor thin-film transistor (TFT) substrate, comprising:

• a substrate, a gate terminal formed on the substrate, a gate insulation layer formed on the substrate and the gate terminal, a drain terminal and a source terminal formed on the gate insulation layer, a channel formed between the drain terminal and the source terminal, and an oxide semiconductor layer formed on and in contact engagement with the drain terminal and the source terminal;
• wherein the channel and the source terminal are formed of an oxide conductor layer that comprises a first portion lapping and in contact engagement with the drain terminal and a second portion forming the source terminal, a void space being formed in the oxide conductor layer and located between the first and second portions to define the channel, the oxide semiconductor layer being arranged to fill up the void space of the oxide conductor layer;
• and wherein the drain terminal is made of a metal, the metal of the drain terminal and the oxide conductor of the source terminal being both in direct contact with the gate insulation layer, and the oxide semiconductor layer is located above the drain terminal and the source terminal such that the drain terminal, the source terminal, and the gate terminal are all located on the same side of the oxide semiconductor layer;
• and
• wherein the oxide conductor layer is indium tin oxide (ITO) or indium zinc oxide (IZO);
• the oxide conductor layer has a thickness less than a thickness of the drain terminal;
• the oxide semiconductor layer is indium gallium zinc oxide (IGZO);
• and the source terminal also functions as a pixel electrode.