Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, at least two gate spacers, and a gate stack. The substrate has at least one semiconductor fin. The gate spacers are disposed on the substrate. At least one of the gate spacers has a sidewall facing to another of the gate spacers. The gate stack is disposed between the gate spacers. The gate stack includes a high-κ dielectric layer and a gate electrode. The high-κ dielectric layer is disposed on the substrate and covers at least a portion of the semiconductor fin while leaving the sidewall of said at least one gate spacer uncovered. The gate electrode is disposed on the high-κ dielectric layer.
Claims20
A semiconductor device, comprising:
- a substrate having at least one semiconductor fin;
- at least two gate spacers disposed on the substrate, wherein at least one of the gate spacers has a sidewall facing another of the gate spacers;
- and
- a gate stack disposed between the gate spacers, the gate stack comprising:
- a high-κ dielectric layer disposed on the substrate and covering at least a portion of the semiconductor fin while leaving the sidewall of said at least one the gate spacers uncovered;
- a gate dielectric layer separate from the high-κ dielectric layer, the gate dielectric layer extending under the gate spacers;
- wherein the gate stack is rectangular in shape from a top down view, and wherein the at least two gate spacers are formed only on a first pair of two opposing sides of the gate stack and wherein an insulating structure, separate from the at least two gate spacers, is formed on a second pair of two opposing sides of the gate stack;
- and
- a gate electrode disposed on the high-κ dielectric layer.
A semiconductor device, comprising:
- a substrate having at least one semiconductor fin;
- at least two gate spacers disposed on the substrate;
- at least two insulating structures disposed between the two gate spacers, wherein the insulating structures and the gate spacers together define an opening therebetween and wherein the insulating structures and the gate spacers have respective bottommost surfaces that are substantially level with one another, the opening has a bottom surface and at least one sidewall;
- and
- a gate stack disposed in the opening, comprising:
- a dielectric layer covering the bottom surface of the opening while leaving the sidewall of the opening uncovered;
- and
- a gate electrode disposed on the dielectric layer.
A method for manufacturing a semiconductor device, comprising:
- forming a high-κ dielectric film on a substrate, wherein the substrate has at least one semiconductor fin;
- forming a dummy layer on the high-κ dielectric film;
- patterning the dummy layer and the high-κ dielectric film to form a dummy structure and a high-κ dielectric layer;
- forming at least two gate spacers on opposite sides of the dummy structure and the high-κ dielectric layer;
- patterning the dummy structure and the high-κ dielectric layer to form a dummy gate stack having a first end with a first space adjacent thereto and a second end with a second space adjacent thereto, the dummy gate stack including a dummy structure portion overlying a high-κ portion;
- filling the first space and the second space with an insulating structure;
- removing the dummy structure to form an opening;
- and
- forming a gate electrode in the opening.
Dependencies are inferred from the claim text.