Semiconductor lateral sidewall growth from a semiconductor pillar
AssigneeInternational Business Machines Corporation
InventorsCheng-Wei Cheng, Sanghoon Lee, Effendi Leobandung, Renee T. Mo, Yanning Sun
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Abstract
A method is provided that may include providing a plurality of semiconductor pillars extending from a surface of a substrate, wherein a spacer is present on sidewall surfaces of each semiconductor pillar. A seed hole is then formed in a portion of each spacer that exposes a portion of at least one sidewall surface of each semiconductor pillar. Next, a semiconductor nanowire is epitaxially grown from the exposed portion of the at least one sidewall surface of each semiconductor pillar and entirely through each seed hole. A gate structure is then formed straddling over a channel portion of each semiconductor nanowire.
Claims20
A method of forming a semiconductor structure, said method comprising:
- providing a plurality of semiconductor pillars extending from a surface of a substrate, wherein a spacer is present on sidewall surfaces of each semiconductor pillar;
- forming a seed hole in a portion of each spacer that exposes a portion of at least one sidewall surface of each semiconductor pillar;
- epitaxially growing a semiconductor nanowire from said exposed portion of said at least one sidewall surface of each semiconductor pillar and entirely through each seed hole;
- and
- forming a gate structure straddling over a channel portion of each semiconductor nanowire.
A semiconductor structure comprising:
- a plurality of semiconductor nanowires oriented parallel to each other, wherein one end of each of said semiconductor nanowires is present in a seed hole provided in a first spacer, and another end of each of said semiconductor nanowires contacts a sidewall surface of a second spacer;
- and
- a functional gate structure oriented perpendicular to and straddling over a channel portion of each of said semiconductor nanowires.
Dependencies are inferred from the claim text.