Multi-layer fin field effect transistor devices and methods of forming the same

A field effect transistor, comprising:

• a fin shaped channel structure on a substrate, the channel structure comprising stressor layers stacked on the substrate and a channel layer between the stressor layers, the stressor layers comprising a semiconductor material having a wide bandgap that is sufficient to confine carriers to the channel layer and having a lattice constant different from a lattice constant of the channel layer to induce stress in the channel layer, and the channel structure comprising a top surface parallel to an upper surface of the substrate;
• source/drain regions on respective first opposing sides of the channel structure;
• a gate on second opposing sides of the channel structure and between the source/drain regions, wherein the second opposing sides of the channel structure extend from the top surface of the channel structure toward the substrate;
• and
• a gate insulating layer extending between the channel structure and the gate, the gate insulating layer comprising a dielectric layer.