Retaining strain in finFET devices

A method for fabricating a semiconductor device, the method comprising:

• patterning a strained fin from a strained layer of semiconductor material arranged on a substrate;
• depositing a first layer of semiconductor material on the fin and exposed portions of the substrate;
• depositing a layer of hardmask material on the first layer of semiconductor material;
• patterning and etching to remove a portion of the first layer of semiconductor material, a portion of the layer of hardmask material, and a portion of the fin to expose a portion of the substrate;
• depositing a second layer of semiconductor material on exposed portions of the substrate and the first layer of semiconductor material;
• and
• patterning and etching to remove a portion of the second layer of semiconductor material layer and the first layer of semiconductor material to define a dummy gate stack, the dummy gate stack is operative to substantially maintain the strain in the strained fin.