Fabrication of a strained region on a substrate

A method of forming a strained channel, comprising:

• forming a single crystal silicon-germanium sacrificial layer on a single crystal substrate surface;
• forming a single crystal silicon channel layer on the single crystal silicon-germanium sacrificial layer;
• forming a silicon nitride stressor layer on the single crystal silicon channel layer, wherein the silicon nitride stressor layer has a tensile or compressive stress;
• forming at least one etching trench by removing at least a portion of the silicon nitride stressor layer, single crystal silicon channel layer, and single crystal silicon-germanium sacrificial layer, wherein the etching trench exposes at least a portion of a sidewall of the single crystal silicon-germanium sacrificial layer, and separates the silicon nitride stressor layer, single crystal silicon channel layer, and single crystal silicon-germanium sacrificial layer into two or more silicon nitride stressor islands, single crystal silicon channel blocks, and single crystal silicon-germanium sacrificial slabs;
• and
• removing the single crystal silicon-germanium sacrificial slabs to release the single crystal silicon channel blocks from the substrate using a selective etch, wherein the single crystal silicon channel blocks adhere to the single crystal substrate surface.

An intermediate channel structure, comprising;

• a substrate with a single crystal surface;
• one or more silicon-germanium pillars, wherein each of the one or more silicon-germanium pillars supports a silicon channel block, and wherein the silicon channel block has a width in the range of about 250 nm to about 10 μm, and a length in the range of about 2 μm to about 100 μm;
• and
• a silicon nitride stressor island on each silicon channel block, wherein the stressor island applies a stress to a top surface of the silicon channel block.