Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Martin M. Frank, Vijay Narayanan
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Abstract
A method is presented for forming a semiconductor device. The method includes forming an oxygen containing interfacial layer on a semiconductor substrate, forming a hafnium oxide layer on the interfacial layer, the hafnium oxide layer crystallizing to a non-centrosymmetric phase in a final structure, forming a first electrode containing a scavenging metal, which reduces a thickness of the interfacial layer via an oxygen scavenging reaction in the final structure, on the hafnium oxide layer, and forming a second electrode on the first electrode.
Claims16
A method of forming a semiconductor device, comprising:
- forming an oxygen containing interfacial layer over a semiconductor substrate;
- forming a hafnium oxide layer on the interfacial layer to obtain a ferroelectric crystalline phase, the hafnium oxide layer crystallizing to a non-centrosymmetric phase in a final structure;
- forming a first electrode including a scavenging metal, which controls a thickness of the interfacial layer via an oxygen scavenging reaction, where interfacial layer scavenging and crystallization into the ferroelectric crystalline phase of the hafnium oxide layer occur at a same annealing step;
- and
- forming a second electrode on the first electrode.
A method of forming a semiconductor device, comprising:
- forming an oxygen containing interfacial layer over a semiconductor substrate;
- forming a hafnium oxide layer on the interfacial layer to obtain a ferroelectric crystalline phase, the hafnium oxide layer crystallizing to a non-centrosymmetric phase in a final structure;
- forming a sacrificial layer including a scavenging metal, which controls a thickness of the interfacial layer via an oxygen scavenging reaction, where interfacial layer scavenging and crystallization into the ferroelectric crystalline phase of the hafnium oxide layer occur at a same annealing step;
- removing the sacrificial layer;
- and
- replacing the sacrificial layer with a metal layer.
Dependencies are inferred from the claim text.