US 9,793,394 B1 · Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures

Abstract

Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures are provided. An exemplary method for fabricating an LDMOS transistor structure includes providing a semiconductor-on-insulator (SOI) substrate including a semiconductor layer overlying an insulator layer overlying a bulk layer. The method includes forming a gate structure overlying the substrate. A channel region is formed in the semiconductor layer under the gate structure. The method includes forming a source region overlying the substrate. Further, the method includes forming a drain region overlying the substrate. A drift region is located between the drain region and the gate structure. Also, the method includes forming contacts to the gate structure, the source region, and the drain region.

Claims20

Dependent claims

A method for fabricating an LDMOS transistor structure, the method comprising:

providing a substrate including a semiconductor layer overlying an insulator layer overlying a bulk layer;
forming a gate structure overlying the substrate, wherein a channel region is formed in the semiconductor layer under the gate structure;
forming an alignment gate overlying a drift region in the substrate;
and
forming a drain region overlying the substrate and self-aligning the drain region with the alignment gate, wherein the drift region is located between the drain region and the gate structure.

2 more elements

Dependencies are inferred from the claim text.

Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures

Life of this patent

Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures

Life of this patent

Abstract

Claims20