Semiconductor device including a vertical PN junction between a body region and a drift region

A method of forming a semiconductor device, the method comprising:

• forming a drift region extending from a main surface into a base substrate;
• forming a body region between two portions of the drift region, the body region forming a first pn junction with the drift region;
• forming a source region between two portions of the body region, the source region forming a second pn junction with the body region, wherein the first and second pn junctions include sections perpendicular to the main surface;
• forming gate structures extending into the body regions and including a gate electrode;
• forming field plate structures extending into the drift region including a field electrode separated from the gate electrode;
• and
• forming a gate shielding structure in a vertical projection of the gate structures and configured to reduce a capacitive coupling between the gate structures and a backplate electrode directly adjoining a supporting surface opposite to the main surface.