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US 9,793,386 B2Granted
Multiple zone power semiconductor device
AssigneeFord Global Technologies, LLC
InventorMing Su
Life of this patent
Estimating the term…
Abstract
A power semiconductor device is comprised of a plurality of zones having similar structure. Each of the zones may be characterized by a switching loss during transitions to a non-conducting state. The device is configured such that the switching loss is different between at least two of the zones. Further, the device is configured such that zones having greater switching losses transition to the non-conducting state before zones having lesser switching losses.
Claims20
An insulated gate bipolar transistor comprising:
- first and second zones each including a plurality of gate regions coupled to an emitter via an emitter region and a base region and coupled to a drift region that is disposed on a collector region, the first zone being configured to (i) have a switching loss greater than the second zone during transitions from a conducting state to a non-conducting state, and (ii) transition, responsive to a common gate signal, from the conducting state to the non-conducting state before the second zone.
A power semiconductor device comprising:
- a plurality of zones configured such that at least two of the zones have different switching losses during transitions from a conducting state to a non-conducting state and such that, for any two of the zones, the zone of the two having a greater switching loss transitions, responsive to a common gate signal, from the conducting state to the non-conducting state before the other of the two.
An insulated gate bipolar transistor comprising:
- a plurality of zones, each characterized by a switching loss during a transition from a conducting state to a non-conducting state, configured such that the switching loss is different between at least two of the zones and such that the zones having greater switching losses transition responsive to a common gate signal, from the conducting state to the non-conducting state before the zones having lesser switching losses.
Dependencies are inferred from the claim text.